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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA05H8693M
BLOCK DIAGRAM
RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp.
DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.8V (typical) and 4V (maximum). At VGG=5V, the typical gate current is 1 mA. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=14V, VGG=0V) * Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW * IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW * Broadband Frequency Range: 866-928MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 60.5 x 14 x 6.4 mm
2
3
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
PACKAGE CODE: H11S RoHS COMPLIANCE * RA05H8693M-101 is a RoHS compliant products. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
ORDERING INFORMATION: ORDER NUMBER RA05H8693M-101 SUPPLY FORM Antistatic tray, 20 modules/tray
RA05H8693M
MITSUBISHI ELECTRIC 1/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA05H8693M
RATING 17 6 4 7 -30 to +110 -40 to +110 UNIT V V mW W C C
MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<14V, Pin=0mW f=866-928MHz, VGG<5V ZG=ZL=50 ditto
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout IT 2fo in IGG -- -- Frequency Range Output Power Total Current 2
nd
CONDITIONS
VDD=14V, VGG=5V, Pin=1mW VDD=14V, Pout=3W(VGG control) Pin=1mW
MIN
866 5
TYP
MAX
928 1.4 -25 3:1
UNIT
MHz W A dBc -- mA -- --
Harmonic
Input VSWR Gate Current Stability Load VSWR Tolerance
1 VDD=10.0-15.2V, Pin=0.5-2mW, Pout<5W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=1mW, Pout=5W (VGG control), Load VSWR=20:1 No parasitic oscillation No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA05H8693M
MITSUBISHI ELECTRIC 2/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA05H8693M
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
35 OUTPUT POWER Pout(W) INPUT VSWR in (-) 30 25 20 15 10 5 0 850
T in
VDD=14V Pout=3W(VGG adj.) Pin=1mW Pout
2nd, 3rd HARMONICS versus FREQUENCY
-20 HARMONICS (dBc) -30 -40
2nd VDD=14V Pout=3W(VGG adj.) Pin=1mW
120 100 TOTAL EFFICIENCY T(%) 80 60 40 20 0 970
-50 -60 -70 850
3
rd
870 890 910 930 950 FREQUENCY f(MHz)
870
890 910 930 FREQUENCY f(MHz)
950
970
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
70 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 60 50 40 30
IDD
Gp
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
70 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT I DD(A) 60
Gp
7 6 5 4 3
f=866MHz, VDD=14V, VGG=5V
7 DRAIN CURRENT IDD(A)
6 DRAIN CURRENT IDD(A)
f=896MHz, VGG=5V, Pin=1mW
6 5
Pout
50 40 30 20 10 0 -20 -15 -10 -5 0 5 INPUT POWER Pin(dBm)
IDD
f=896MHz, VDD=14V, VGG=5V
Pout
4 3 2 1 0
20 10 0 -20 -15 -10 -5
2 1 0
0
5
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
70 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 60 50 40 30
IDD
Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
70 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) 60 50 40 30
IDD
Gp Pout
7 6 5 4 3
f=926MHz, VDD=14V, VGG=5V
7 DRAIN CURRENT IDD(A) 5
Pout
6 5 4 3 2
f=956MHz, VDD=14V, VGG=5V
20 10 0 -20 -15 -10 -5
2 1 0
20 10 0 -20 -15 -10 -5 0 5 INPUT POWER Pin(dBm)
1 0
0
5
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
30 OUTPUT POWER Pout(W) 25 20 15 10 5 0 3 5 7 9 11 13 DRAIN VOLTAGE VDD(V) 15
IDD
f=866MHz, VGG=5V, Pin=1mW Pout
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
6 DRAIN CURRENT IDD(A) 5 4 3 2 1 0 OUTPUT POWER Pout(W) 30 25 20 15 10 5 0 3 5 7 9 11 13 DRAIN VOLTAGE VDD(V) 15
IDD
4 3 2 1 0
RA05H8693M
MITSUBISHI ELECTRIC 3/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA05H8693M
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
30 OUTPUT POWER Pout(W) 25 20 15
IDD
Pout f=926MHz, VGG=5V, Pin=1mW
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
6 DRAIN CURRENT I DD(A) 5 4 3 2 1 0 OUTPUT POWER Pout(W) 30 25 20 15
IDD
f=956MHz, VGG=5V, Pin=1mW
6 DRAIN CURRENT I DD(A) 6
Pout
5 4 3
Pout
10 5 0 3 5 7 9 11 13 DRAIN VOLTAGE VDD(V) 15
10 5 0 3 5
2 1 0
7 9 11 13 DRAIN VOLTAGE VDD(V)
15
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
30 OUTPUT POWER Pout(W) 25 20 15 10 5 0 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5
f=866MHz, VDD=14V, Pin=1mW Pout
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
6 OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) 5 30 25 20 15 10 5 0 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5
IDD
f=896MHz, VDD=14V, Pin=1mW
IDD
4 3 2 1 0
4 3 2 1 0
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
30 OUTPUT POWER Pout(W) 25 20 15 10 5 0 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5
f=926MHz, VDD=14V, Pin=1mW
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
6 OUTPUT POWER Pout(W) DRAIN CURRENT I DD(A) 5 30 25 20 15 10
Pout f=956MHz, VDD=14V, Pin=1mW
6 DRAIN CURRENT I DD(A) 5 4
IDD
IDD
Pout
4 3 2 1 0
3 2 1 0
5 0 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5
RA05H8693M
MITSUBISHI ELECTRIC 4/8
DRAIN CURRENT IDD(A)
5
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA05H8693M
OUTLINE DRAWING (mm)
60.51 57.50.5 50.41 2-R1.60.2
140.5
1
2
3
4
5 61
8.31 21.31
0.45
43.31 51.31
3.3 +0.8/-0.4
Area [A] Expansion figure of area [A]
0.090.02
(49.5)
0.090.02
2.30.3
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
RA05H8693M
MITSUBISHI ELECTRIC 5/8
(6.4)
110.5
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA05H8693M
TEST BLOCK DIAGRAM
Power Meter 1 2
DUT
3 4
5
Spectrum Analyzer
Signal Generator
Attenuator
Preamplifier
Attenuator
Directional Coupler
ZG=50
ZL=50
Directional Coupler
Attenuator
Power Meter
C1
C2
+ DC Power Supply VGG C1, C2: 4700pF, 22uF in parallel
+ DC Power Supply VDD
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
4
5
RA05H8693M
MITSUBISHI ELECTRIC 6/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA05H8693M
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor operating conditions are: Pin IDD @ IT=1.4A Pout Rth(ch-case) VDD Stage (C/W) (W) (W) (A) (V) st 1 0.001 0.03 29.0 0.02 14 2nd 0.030 0.70 4.5 0.30 rd 3 0.700 3.00 3.0 1.07 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (14V x 0.02A - 0.03W + 0.001W) x 29.0C/W = Tcase + 7.3C Tch2 = Tcase + (14V x 0.3A - 0.7W + 0.03W) x 4.5C/W = Tcase + 15.9 C = Tcase + 38.0 C Tch3 = Tcase + (14V x 1.07A - 3.0W + 0.7W) x 3.0C/W For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=3W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (3W/15% - 3W + 0.001W) = 1.76 C/W When mounting the module with the thermal resistance of 1.76 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 37.3 C Tch2 = Tair + 45.9 C Tch3 = Tair + 68.0 C The 175C maximum rating for the channel temperature ensures application under derated conditions.
RA05H8693M
MITSUBISHI ELECTRIC 7/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA05H8693M
Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) FM modulation: By the gate voltage (VGG). b) Linear modulation: By RF input power Pin. The gate voltage is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.
RA05H8693M
MITSUBISHI ELECTRIC 8/8
2nd Mar 2007

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